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| Preliminary Data Sheet I0211J 12/99 IR255SG..HCB PHASE CONTROL THYRISTORS Junction Size: Wafer Size: V RRM Class: Passivation Process: Square 250 mils 4" 600 to 1200 V Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters VTM Maximum On-state Voltage Units 1.25 V Test Conditions T J = 25C, I T = 25 A (1) VDRM/VRRM Direct and Reverse Breakdown Voltage IGT VGT IH IL Max. Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current 600 to 1200 V TJ = 25C, I DRM /IRRM = 100 A 80 mA 2V 5 to 100 mA 300 mA TJ = 25 C, anode supply = 6 V, resistive load T J = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 250 x 250 mils (see drawing) 100 mm, with std. <110> flat 330 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR255SG..HCB Preliminary Data Sheet I0211J 12/99 Ordering Information Table Device Code IR 1 255 2 S 3 G 4 12 5 H 6 CB 7 1 2 3 4 5 6 7 - International Rectifier Device Chip Dimension in Mils Type of Device: S = Solderable SCR Passivation Process: G = Glassivated MESA Voltage code: Code x 100 = VRRM Metallization: H = Silver (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) Available Class 06 = 600 V 08 = 800 V 12 =1200 V None = Probed Die in chip carrier Outline Table All dimensions are in millimiters 2 www.irf.com IR255SG..HCB Preliminary Data Sheet I0211J 12/99 Wafer Layout TOP VIEW N 148 Basic Cells All dimensions are in millimiters www.irf.com 3 |
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